HI32C Datasheet | Hi-Sincerity Mocroelectronics

Description The HI32C is designed for use in general purpose amplifier and low speed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C - Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 15W - Maximum Voltages and Currents BVCBO Collector to Base Voltage -100 V BVCEO Collector to Emitter Voltage -100 V BVEBO Emitter to Base Voltage -5 V IC Collector Current -3 A .. Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICES ICEO IEBO - VCE(sat) - VBE(on) - h FE1 - h FE2 f T Min. -100 -100 25 10 3 Typ. Max. -20 -50 -1 -1.2 -1.8 50 Unit V V u A u A m A V V Test Conditions IC=-1m A, IE=0 IC=-30m A, IB=0 VCE=-100V, VBE=0 VCE=-60V, IB=0 VEB=-5V, IC=0 IC=-3A, IB=-375m A VCE=-4V, IC=-3A VCE=-4V, IC=-1A VCE=-4V, IC=-3A VCE=-10V, IC=-500m A, f=1MHz - Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% MHz HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 1000 Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2002.01.17 Page No. : 2/3 Saturation Voltage & Collector Current Saturation Voltage (m V) 125 C o 75 C o h FE 25 C o 75 C 125 C 25 C VCE(sat) @ IC=8IB o o o h FE @ VCE=4V 10 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current IC (m...