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HI32C - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HI32C datasheet PDF. This datasheet also covers the HI32C_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HI32C is designed for use in general purpose amplifier and low speed switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (T

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI32C_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI32C
Manufacturer Hi-Sincerity Mocroelectronics
File Size 60.07 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI32C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2002.01.17 Page No. : 1/3 HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ......................................................................................