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HI649A - PNP Transistor

Download the HI649A datasheet PDF. This datasheet also covers the HI649A_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HI649A is designed for low frequency power amplifier.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W Maximum Voltage

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI649A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI649A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 192.82 KB
Description PNP Transistor
Datasheet download datasheet HI649A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2002.04.03 Page No. : 1/3 HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage.....