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HI6718 - NPN Transistor

Download the HI6718 datasheet PDF. This datasheet also covers the HI6718_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HI6718 is designed for general purpose medium power amplifier and switching.

Key Features

  • High power: 1.2W.
  • High current: 1A Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W.
  • Maximum Voltages and Currents DataSheet4U. com BVCBO Collector to Base Voltage 100 V DataShee BVCEO Collector to Emitter Voltage 100 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 1 A Characteristics (Ta=25°C) Symb.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI6718_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI6718
Manufacturer Hi-Sincerity Mocroelectronics
File Size 181.59 KB
Description NPN Transistor
Datasheet download datasheet HI6718 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9008-A Issued Date : 1998.04.10 Revised Date : 2000.11.01 Page No. : 1/2 HI6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI6718 is designed for general purpose medium power amplifier and switching. Features • High power: 1.2W • High current: 1A Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................