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HIRF630 - N-Channel MOSFET

Download the HIRF630 datasheet PDF. This datasheet also covers the HIRF630_Hi variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers.

Key Features

  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Value TO-220AB 1.71 TO-220FP 3.3 62 Units °C/W °C/W HIRF630 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 123 3-Lead Plastic T.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HIRF630_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HIRF630
Manufacturer Hi-Sincerity Mocroelectronics
File Size 76.12 KB
Description N-Channel MOSFET
Datasheet download datasheet HIRF630 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 HIRF630 / HIRF630F N-CHANNEL POWER MOSFET Description This power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Value TO-220AB 1.71 TO-220FP 3.