HJ10387 - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the HJ10387 datasheet PDF. This datasheet also covers the HJ10387_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HJ10387 is designed for general purpose amplifier and low speed switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25

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HJ10387 npn epitaxial planar transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HJ10387_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HJ10387
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	97.12 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HJ10387 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6028 Issued Date : 1997.06.24 Revised Date : 2008.04. 09 Page No. : 1/5 HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ10387 is designed for general purpose amplifier and low speed switching applications. Absolute Maximum Ratings (TA=25°C) TO-252 • Maximum Temperatures Storage Temperature .......................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................