Download the HJ1109 datasheet PDF. This datasheet also covers the HJ1109_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
Low frequency high voltage amplifier.
Complementary pair with HJ1609.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W
| Part number | HJ1109 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 31.23 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HJ1109 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HJ11867 | Three-channel fluxgate signal processing IC | ETC |
| HJ12003 | Power Divider | Signal |
| HJ13002 | NPN Epitaxial Silicon Transistor | Hefei Hejing |
| HJ1602A | Dot Matrix LCD | Ovation |
| Part Number | Description |
|---|---|
| HJ112 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HJ117 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HJ10387 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HJ122 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HJ127 | PNP EPITAXIAL PLANAR TRANSISTOR |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
