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HJ122 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HJ122 datasheet PDF. This datasheet also covers the HJ122_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HJ122 is designed for use in general purposes and low speed switching applications.

Key Features

  • High DC current gain.
  • Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W.
  • Maximum Voltages and Currents (TA=25°C) BVCBO Colle.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HJ122_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ122
Manufacturer Hi-Sincerity Mocroelectronics
File Size 95.62 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ122 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date :2008.04.09 Page No. : 1/5 Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications. Darlington Schematic C Features • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E • Maximum Temperatures Storage Temperature .......................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................................