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HJ210 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HJ210, a member of the HJ210_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

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Datasheet Details

Part number HJ210
Manufacturer Hi-Sincerity Mocroelectronics
File Size 23.32 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ210 Datasheet
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HJ210 Product details

Description

The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 12.5 W
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