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HJ210 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ210 datasheet PDF. This datasheet also covers the HJ210_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 12.5 W

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HJ210_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ210
Manufacturer Hi-Sincerity Mocroelectronics
File Size 23.32 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ210 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No. : 1/2 HJ210 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ................................................................................. 12.5 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ...