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HJ2955 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ2955 datasheet PDF. This datasheet also covers the HJ2955_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HJ2955 is designed for general purpose of amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HJ2955_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ2955
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.17 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ2955 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No. : 1/4 HJ2955 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2955 is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-252 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C)..................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage........