Datasheet Details
| Part number | HJ3669 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 89.45 KB |
| Description | NPN TRANSISTOR |
| Datasheet | HJ3669 HJ3669_Hi Datasheet (PDF) |
|
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Overview: HI-SINCERITY MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2008.04.09 Page No.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HJ3669 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 89.45 KB |
| Description | NPN TRANSISTOR |
| Datasheet | HJ3669 HJ3669_Hi Datasheet (PDF) |
|
|
|
The HJ3669 is designed for using in power amplifier applications, power switching application.
Absolute Maximum Ratings (TA=25°C) TO-252 • Maximum Temperatures Tstg Storage Temperature...................................................................................................................
-55 ~ +150 °C Tj Junction Temperature ...............................................................................................................................
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