HJ6718 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HJ6718, a member of the HJ6718_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HJ6718
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	22.68 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HJ6718 Datasheet
Additional preview pages of the HJ6718 datasheet.

The HJ6718 is designed for general purpose medium power amplifier and switching .

High power: 1.2W.
High current: 1A Absolute Maximum Ratings (Ta=25°C).
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage 100 V BVCEO Collector to Emitter Voltage.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 23, 2005 |