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HLB122J - NPN Transistor

Download the HLB122J datasheet PDF. This datasheet also covers the HLB122J_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HLB122J is a medium power transistor designed for use in switching applications.

Key Features

  • High breakdown voltage.
  • Low collector saturation voltage.
  • Fast switching speed TO-252 Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 30 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HLB122J_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HLB122J
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.39 KB
Description NPN Transistor
Datasheet download datasheet HLB122J Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

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HLB121J NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 1/4 HLB122J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122J is a medium power transistor designed for use in switching applications. Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed TO-252 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................