HLB122J - NPN Transistor

This page provides the datasheet information for the HLB122J, a member of the HLB122J_Hi NPN Transistor family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HLB122J
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	34.39 KB
Description	NPN Transistor
Datasheet	HLB122J Datasheet
Additional preview pages of the HLB122J datasheet.

The HLB122J is a medium power transistor designed for use in switching applications.

High breakdown voltage.
Low collector saturation voltage.
Fast switching speed TO-252 Absolute Maximum Ratings (Ta=25°C).
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 30 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage.

HLB122 - NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR (UTC)
HLB121 - NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR (UTC)
HLB121A - NPN Triple Diffused Planar Type High Voltage Transistor (HI-SINCERITY)
HLB123D - NPN Transistor (INCHANGE)
HLB124 - NPN EPITAXIAL PLANAR TRANSISTOR (UTC)
HLB124E - NPN Transistor (INCHANGE)
HLB125HE - NPN Epitaxial Planar Transistor (Hi-Sincerity Microelectronics)

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 23, 2005 |