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HM5551 Datasheet NPN Epitaxial Planar Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HM5551
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.08 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HM5551 HM5551_Hi Datasheet (PDF)

General Description

The HM5551 is designed for general purpose applications requiring high breakdown voltages.

Key Features

  • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA).
  • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.2 W.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.

More Datasheets from Hi-Sincerity Mocroelectronics

Part Number Description
HM5401 NPN EPITAXIAL PLANAR TRANSISTOR

HM5551 Distributor