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HM5551 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HM5551 datasheet PDF. This datasheet also covers the HM5551_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HM5551 is designed for general purpose applications requiring high breakdown voltages.

Key Features

  • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA).
  • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.2 W.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM5551_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HM5551
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.08 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HM5551 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HM5401 NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page No. : 1/4 Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. Features • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................