HM879 - SILICON NPN EPITAXIAL TYPE TRANSISTOR

This page provides the datasheet information for the HM879, a member of the HM879_Hi SILICON NPN EPITAXIAL TYPE TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HM879
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	26.22 KB
Description	SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet	HM879 Datasheet
Additional preview pages of the HM879 datasheet.

For 1.5V And 3V Electronic Flash Use.

Spec.

No.

SOT-89.
Charger-up time is about 1 mS faster than of a germanium transistor.
Small saturation voltage can bring less power dissipation and flashing times. Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1 W.
Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage.

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Published: Mar 26, 2005 |