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HM879 - SILICON NPN EPITAXIAL TYPE TRANSISTOR

Download the HM879 datasheet PDF. This datasheet also covers the HM879_Hi variant, as both devices belong to the same silicon npn epitaxial type transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

For 1.5V And 3V Electronic Flash Use.

Spec.

No.

Key Features

  • SOT-89.
  • Charger-up time is about 1 mS faster than of a germanium transistor.
  • Small saturation voltage can bring less power dissipation and flashing times. Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1 W.
  • Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM879_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HM879
Manufacturer Hi-Sincerity Mocroelectronics
File Size 26.22 KB
Description SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet download datasheet HM879 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 Features SOT-89 • Charger-up time is about 1 mS faster than of a germanium transistor. • Small saturation voltage can bring less power dissipation and flashing times. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ....................................................