Hi-Sincerity Mocroelectronics HM879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
DESCRIPTION
For 1.5V And 3V Electronic Flash Use. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3FEATURES
SOT-89● Charger-up time is about 1 mS faster than of a germanium transistor.
● Small saturation voltage can bring less power dissipation and flashing times.
ABSOLUTE MAXIMUM RATINGS
● Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum● Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
● Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage.........................................................................