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HM965 - NPN Transistor

Download the HM965 datasheet PDF. This datasheet also covers the HM965_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HM965 is designed for use as AF output amplifier and glash unit.

Key Features

  • Low VCE(sat).
  • High performance at low supply voltage SOT-89 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.2 W.
  • Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage 40 V BVCEO Collector to Emitter Voltage 20 V BVEBO Emitter to Base Voltage 7 V IC Collector Current (Continuous) 5 A IC Collector.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM965_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HM965
Manufacturer Hi-Sincerity Mocroelectronics
File Size 27.86 KB
Description NPN Transistor
Datasheet download datasheet HM965 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9511 Issued Date : 1996.04.12 Revised Date : 2002.10.01 Page No. : 1/3 HM965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM965 is designed for use as AF output amplifier and glash unit. Features • Low VCE(sat) • High performance at low supply voltage SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .................................................................................... 1.