Download the HMBT1015 datasheet PDF. This datasheet also covers the HMBT1015_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (T
| Part number | HMBT1015 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 40.09 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HMBT1015 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HMBT2222A | NPN Switching Transistor SMD | HAOHAI |
| HMBT2222AXLT1G | General Purpose Transistor NPN Silicon | HI-SINCERITY |
| HMBT2907AXLT1G | General Purpose Transistor PNP Silicon | HI-SINCERITY |
| HMBT3904 | NPN Switching Transistor SMD | HAOHAI |
| HMBT4401XLT1G | General Purpose Transistor NPN Silicon | HI-SINCERITY |
| Part Number | Description |
|---|---|
| HMBT1815 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT2222A | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT2369 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT2484 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT2907A | PNP Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
