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HMBT2369 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HMBT2369, a member of the HMBT2369_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HMBT2369 is designed for general purpose switching and amplifier applications.

Features

  • Low Collector Saturation Voltage.
  • High speed switching Transistor SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Datasheet preview – HMBT2369

Datasheet Details

Part number HMBT2369
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.77 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMBT2369 Datasheet
Additional preview pages of the HMBT2369 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2004.09.07 Page No. : 1/4 Description The HMBT2369 is designed for general purpose switching and amplifier applications. Features • Low Collector Saturation Voltage • High speed switching Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................
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