HMBT2369 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HMBT2369, a member of the HMBT2369_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HMBT2369
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	38.77 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HMBT2369 Datasheet
Additional preview pages of the HMBT2369 datasheet.

The HMBT2369 is designed for general purpose switching and amplifier applications.

Low Collector Saturation Voltage.
High speed switching Transistor SOT-23 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |