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HMBT2369 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HMBT2369 datasheet PDF. This datasheet also covers the HMBT2369_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMBT2369 is designed for general purpose switching and amplifier applications.

Key Features

  • Low Collector Saturation Voltage.
  • High speed switching Transistor SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT2369_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT2369
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.77 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMBT2369 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2004.09.07 Page No. : 1/4 Description The HMBT2369 is designed for general purpose switching and amplifier applications. Features • Low Collector Saturation Voltage • High speed switching Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................