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HMBT2907A - PNP Transistor

Download the HMBT2907A datasheet PDF. This datasheet also covers the HMBT2907A_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMBT2907A is designed for general purpose amplifier and high -speed switching, medium power switching applications.

Key Features

  • Low Collector Saturation Voltage.
  • High Speed Switching.
  • For Complementary Use With NPN Type HMBT2222A SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 225 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -60 V VCEO Collector to Emitter Voltage -60 V VEBO Emitter to Base Voltage -5 V I.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT2907A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT2907A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 30.02 KB
Description PNP Transistor
Datasheet download datasheet HMBT2907A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6821 Issued Date : 1993.06.23 Revised Date : 2002.10.25 Page No. : 1/3 HMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT2907A is designed for general purpose amplifier and high -speed switching, medium power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching • For Complementary Use With NPN Type HMBT2222A SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............