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HMBT4403 - PNP Transistor

Download the HMBT4403 datasheet PDF. This datasheet also covers the HMBT4403_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMBT4403 is designed for general purpose applications requiring high breakdown voltages.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 225 mW

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT4403_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT4403
Manufacturer Hi-Sincerity Mocroelectronics
File Size 35.99 KB
Description PNP Transistor
Datasheet download datasheet HMBT4403 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................