HMBT5401 Overview
The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.
HMBT5401 Key Features
- High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA)
- plements to NPN Type HMBT5551
PNP Transistor
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HMBT5401 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 38.75 KB |
| Description | PNP Transistor |
| Datasheet | HMBT5401 HMBT5401_Hi Datasheet (PDF) |
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The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.
See all Hi-Sincerity Mocroelectronics datasheets
| Part Number | Description |
|---|---|
| HMBT5086 | PNP Transistor |
| HMBT5087 | PNP Transistor |
| HMBT5088 | NPN Transistor |
| HMBT5089 | NPN Transistor |
| HMBT5551 | NPN Transistor |
| HMBT1015 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBT1815 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT2222A | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT2369 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT2484 | NPN EPITAXIAL PLANAR TRANSISTOR |