HMBT5401 - PNP Transistor

This page provides the datasheet information for the HMBT5401, a member of the HMBT5401_Hi PNP Transistor family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HMBT5401
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	38.75 KB
Description	PNP Transistor
Datasheet	HMBT5401 Datasheet
Additional preview pages of the HMBT5401 datasheet.

The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.

High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA).
Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to B.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |