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HMJE13003T - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HMJE13003T datasheet PDF. This datasheet also covers the HMJE13003T_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMJE13003T is designed for high voltage.

High speed switching inductive circuits and amplifier applications.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 3.5 W Total Power Dissipation (Tc=25°C) 30 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage 600 V BVCEO Collector to Emitter Voltage 400 V BVEBO Emitter to Base Volt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMJE13003T_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMJE13003T
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.19 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMJE13003T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C)....................................................