HMJE13003T - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HMJE13003T
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	37.19 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HMJE13003T Datasheet
Note	This datasheet PDF includes multiple part numbers: HMJE13003T, HMJE13003T_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HMJE13003T datasheet.

The HMJE13003T is designed for high voltage.

High Speed Switching.
Low Saturation Voltage.
High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 3.5 W Total Power Dissipation (Tc=25°C) 30 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage 600 V BVCEO Collector to Emitter Voltage 400 V BVEBO Emitter to Base Volt.

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Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |