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HMJE13003T - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HMJE13003T, a member of the HMJE13003T_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HMJE13003T is designed for high voltage.

High speed switching inductive circuits and amplifier applications.

Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 3.5 W Total Power Dissipation (Tc=25°C) 30 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage 600 V BVCEO Collector to Emitter Voltage 400 V BVEBO Emitter to Base Volt.

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Datasheet preview – HMJE13003T

Datasheet Details

Part number HMJE13003T
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.19 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMJE13003T Datasheet
Additional preview pages of the HMJE13003T datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C)....................................................
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