• Part: HMJE13003T
  • Description: NPN EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 37.19 KB
Download HMJE13003T Datasheet PDF
Hi-Sincerity Mocroelectronics
HMJE13003T
Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features - High Speed Switching - Low Saturation Voltage - High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C) - Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 3.5 W Total Power Dissipation (Tc=25°C) 30 W - Maximum Voltages and Currents BVCBO Collector to Base Voltage 600 V BVCEO Collector to Emitter Voltage...