HPN2369A Datasheet PDF (NPN EPITAXIAL PLANAR TRANSISTOR) | Download Hi-Sincerity Mocroelectronics HPN2369A

HPN2369A - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HPN2369A, a member of the HPN2369A_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HPN2369A is designed for general purpose switching and amplifier applications.

Features

Low Collector Saturation Voltage.
High Speed Switching Transistor Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 40 V VCES Collector to Emitter Voltage 40 V VCEO Collector to Emitter Voltage 15 V VEBO Emitter to Base Voltage 4.5 V IC Co.

Datasheet Details

Part number	HPN2369A
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	38.23 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HPN2369A Datasheet
Additional preview pages of the HPN2369A datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 1/4 HPN2369A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2369A is designed for general purpose switching and amplifier applications. Features • Low Collector Saturation Voltage • High Speed Switching Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .......................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................. +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .........................................................................

Published: Mar 26, 2005 |