Download the HPN2369A datasheet PDF.
This datasheet also covers the HPN2369A_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The HPN2369A is designed for general purpose switching and amplifier applications.
Key Features
Low Collector Saturation Voltage.
High Speed Switching Transistor
Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 40 V VCES Collector to Emitter Voltage 40 V VCEO Collector to Emitter Voltage 15 V VEBO Emitter to Base Voltage 4.5 V IC Co.
Note: The manufacturer provides a single datasheet file (HPN2369A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HPN2369A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HPN2369A. For precise diagrams, and layout, please refer to the original PDF.
09.20 Page No. : 1/4 HPN2369A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2369A is designed for general purpose switching and amplifier applications. Features • Low Collector Saturation Voltage • High Speed Switching Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .......................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................. +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ........
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HPN2369A Datasheet
