HPN2907A Datasheet PDF (PNP EPITAXIAL PLANAR TRANSISTOR) | Download Hi-Sincerity Mocroelectronics HPN2907A

HPN2907A - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HPN2907A, a member of the HPN2907A_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Description

The HPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications.

Features

Low Collector Saturation voltage.
High Speed Switching.
For Complementary Use with NPN Type HPN2222A TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -60 V VCEO Collector to Emitter Voltage -60 V VEBO Emitter to Base Voltage -.

Datasheet Details

Part number	HPN2907A
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	37.25 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HPN2907A Datasheet
Additional preview pages of the HPN2907A datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6105 Issued Date : 1992.09.09 Revised Date : 2002.04.15 Page No. : 1/4 HPN2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation voltage • High Speed Switching • For Complementary Use with NPN Type HPN2222A TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................. 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C).........

Published: Mar 26, 2005 |