Download the HPN2907A datasheet PDF.
This datasheet also covers the HPN2907A_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The HPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications.
Key Features
Low Collector Saturation voltage.
High Speed Switching.
For Complementary Use with NPN Type HPN2222A
TO-92
Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -60 V VCEO Collector to Emitter Voltage -60 V VEBO Emitter to Base Voltage -.
Note: The manufacturer provides a single datasheet file (HPN2907A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HPN2907A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HPN2907A. For precise diagrams, and layout, please refer to the original PDF.
04.15 Page No. : 1/4 HPN2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation voltage • High Speed Switching • For Complementary Use with NPN Type HPN2222A TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................. 150 °C Maximum • Maxi
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HPN2907A Datasheet
