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HSA733 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HSA733 datasheet PDF. This datasheet also covers the HSA733_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HSA733 is designed for use in driver stage of AF amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 250 mW

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Note: The manufacturer provides a single datasheet file (HSA733_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSA733
Manufacturer Hi-Sincerity Mocroelectronics
File Size 49.07 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSA733 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSA733 PNP Epitaxial Planar Transistor Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2006.07.28 Page No. : 1/5 Description The HSA733 is designed for use in driver stage of AF amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature ..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..................................................................................