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HTIP112 - NPN EPITAXIAL PLANAR TRANSISTOR

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Datasheet preview – HTIP112

Datasheet Details

Part number HTIP112
Manufacturer Hi-Sincerity Mocroelectronics
File Size 52.92 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HTIP112 Datasheet
Note This datasheet PDF includes multiple part numbers: HTIP112, HTIP112_Hi.
Please refer to the document for exact specifications by model.
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Description

The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E Maximum Power Dissipation Total Power Dissipation (TC=25°C) 50 W Total Power Dissipation (TA=25°C) 2 W Maximum Voltages and Currents BVCBO Collector to Base Voltage

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