HTIP112 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HTIP112, a member of the HTIP112_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications.

Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E Maxim

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	HTIP112
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	52.92 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HTIP112 Datasheet
Additional preview pages of the HTIP112 datasheet.

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HI-SINCERITY MICROELECTRONICS CORP. HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2004.11.19 Page No. : 1/5 Description The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures B Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 50 W Total Power Dissipation (TA=25°C) ..

Published: Mar 26, 2005 |