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HMJE13001 - NPN Triple Diffused Planar Type High Voltage Transistor

This page provides the datasheet information for the HMJE13001, a member of the HMJE13001_Hi NPN Triple Diffused Planar Type High Voltage Transistor family.

Datasheet Summary

Description

The HMJE13001 is a medium power transistor designed for use in switching applications.

Features

  • High breakdown voltage.
  • Low collector saturation voltage.
  • Fast switching speed TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1 W Total Power Dissipation (TC=25°C).

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Datasheet preview – HMJE13001

Datasheet Details

Part number HMJE13001
Manufacturer Hi-Sincerity
File Size 46.90 KB
Description NPN Triple Diffused Planar Type High Voltage Transistor
Datasheet download datasheet HMJE13001 Datasheet
Additional preview pages of the HMJE13001 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Spec. No. : HA200213 Issued Date : 2002.06.01 Revised Date : 2005.02.05 Page No. : 1/4 Description The HMJE13001 is a medium power transistor designed for use in switching applications. Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ....................................................................................................................................
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