SCF65R190C Datasheet | HiSemicon

DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency. Features - VDS(V)=650V,ID=20A - RDS(ON) TYP:165mΩ@VGS=10V ID=10A MAX:190mΩ Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power 1 23 1:Gate 2:Darin 3:Source ORDERING INFORMATION Part No. SCF65R190C Package TO-220F-3L Marking SCF65R190C Material Pb Free Packing Tube Http://.hi-semicon. Rev 1.0 Page 1 of 8 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings Drain-Source Voltage Gate-Source Voltage ±20 TC = 25C Drain Current TC = 100C Drain Current Pulsed(Note 1) Power Dissipation(TC=25C) -Derate above...