SCF65R190C - 650V N-CHANNEL MOSFE

Product Overview

HiSemicon

Datasheet Details

Part number	SCF65R190C
Manufacturer	HiSemicon
File Size	672.44 KB
Description	650V N-CHANNEL MOSFE
Datasheet	SCF65R190C Datasheet
Additional preview pages of the SCF65R190C datasheet.

Product details

Description

The Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.

Features

VDS(V)=650V,ID=20A.
RDS(ON) TYP:165mΩ@VGS=10V ID=10A MAX:190mΩ.

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Published: Aug 26, 2025 |