SFE6001T2 Overview
The SFE6001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.
SFE6001T2 Key Features
- VDS=60V,ID=12A -RDS(on) TYP: 31mΩ@VGS=10V ID=10A
Datasheet Details
| Part number | SFE6001T2 |
|---|---|
| Datasheet | SFE6001T2-HiSemicon.pdf |
| File Size | 1.98 MB |
| Manufacturer | HiSemicon |
| Description | 60V 12A N-CHANNEL POWER MOSFET |
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