SFE6001T2 Description
The SFE6001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.
SFE6001T2 Key Features
- VDS=60V,ID=12A -RDS(on) TYP: 31mΩ@VGS=10V ID=10A
SFE6001T2 is 60V 12A N-CHANNEL POWER MOSFET manufactured by HiSemicon.
The SFE6001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.