SFM3011T Overview
The SFM3011T uses advanced trench technology and design to provide excellent RDS(pn) with low gate charge. It can be used in a wide variety applications.
SFM3011T Key Features
- VDS=30V,ID=110A -RDS(on) TYP:3.9mΩ@VGS=10V ID=20A
| Part number | SFM3011T |
|---|---|
| Datasheet | SFM3011T-HiSemicon.pdf |
| File Size | 650.91 KB |
| Manufacturer | HiSemicon |
| Description | 110A 30V N-CHANNEL POWER MOSFET |
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The SFM3011T uses advanced trench technology and design to provide excellent RDS(pn) with low gate charge. It can be used in a wide variety applications.
| Part Number | Description |
|---|---|
| SFM3010PT | 30V 100A P-CHANNEL POWER MOSFET |