SFN0213T2 Description
The SFN0213T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.
SFN0213T2 Key Features
- VDS=20V,ID=13A -RDS(on) TYP:6.0mΩ@VGS=4.5V
SFN0213T2 is 20V 13A DUAL N-CHANNEL POWER MOSFET manufactured by HiSemicon.
The SFN0213T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.