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SFN3003PT Datasheet PDF

HiSemicon SFN3003PT

The SFN3003PT use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.
Part No. SFN3003PT
Datasheet SFN3003PT Download
Manufacturer
HiSemicon
Description -30V -30A P-CHANNEL POWER MOSFET
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SFN3003PT datasheet page 1 preview

GENERAL DESCRIPTION

It can be used in a wide variety applications.

FEATURES

●VDS=-30V, ID=-30A
●RDS(on) TYP:7.2mΩ@VGS=-10V ID=-15A MAX:9.5mΩ

APPLICATIONS

●Power faction correction (PFC)
●Switched mode power supplies (SMPS)
●Uninterruptible power supply (UPS)
●LED lighting power SFN3003PT ORDERING INFORMATION Part No. SFN3003PT Package PDFN3*3-8L Marking SFN3003PT Material Pb free Packing Reel Rev 1.0 Page 1 of 8 SFN3003PT

ABSOLUTE MAXIMUM RATINGS

(TJ=25C unless otherwise noted) Characteristics Symbol Ratings Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current TC = 25C ID TC = 100C Drain Current Pulsed (Note 1) IDM Power Dissipation(TC=25C) -Derate above 25C PD Operation Junction Temperature Range TJ Storage Temperature Range Tstg Maximum lead temperature for soldering TL purposes,1/8" from case for 5 seconds -30 ±20 -30 -21 -90 42 -55~+150 -55~+150 300 Unit V V A A W C C C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance...
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