HiSemicon SFS2305B
The Power MOSFET has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.GENERAL DESCRIPTION
FEATURES
●VDS=-20V, ID=-4.8A●RDS(ON) TYP:24mΩ@VGS = -4.5V TYP:30mΩ@VGS = -2.5V
APPLICATIONS
●Load Switch●PWM
APPLICATIONS
●Power Management SFS2305B ORDERING INFORMATION Part No. SFS2305B Package SOT-23 SOT-23-3L Marking 2305B Material Pb Free Packing Reel Rev 1.0 Page 1 of 9 SFS2305BABSOLUTE MAXIMUM RATINGS
(TJ=25C unless otherwise noted) Characteristics Symbol Ratings Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 TC = 25C -4.8 Drain Current ID TC = 75C -3.6 Drain Current Pulsed(Note 1) IDM -18 Power Dissipation(TC=25C) -Derate above 25C PD 1 Single Pulsed Avalanche Energy (Note 2) EAS Operation Junction Temperature Range TJ Storage Temperature Range Tstg 30.5 -55~+150 -55~+150 Maximum lead temperature for soldering TL 300 purposes,1/8" from case for 5 seconds Unit V V A A W mJ C C ℃ELECTRICAL CHARACTERISTICS
Characteristics Off Characteristics Symbol Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate...