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1SS108 - Silicon Schottky Barrier Diode

Key Features

  • Detection efficiency is very good.
  • Small temperature coefficient.
  • High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2nd band Black Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS108 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125.
  • 55 to +125 Unit V mA °C °C Electrica.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2nd band Black Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS108 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol IF IR C η — Min 3.0 — — 70 70 Typ — — — — — Max — 100 3.