1SS108 - Silicon Schottky Barrier Diode

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Hitachi Semiconductor

Part number	1SS108
Manufacturer	Hitachi Semiconductor
File Size	17.76 KB
Description	Silicon Schottky Barrier Diode
Datasheet	1SS108 Datasheet
Additional preview pages of the 1SS108 datasheet.

Detection efficiency is very good.
Small temperature coefficient.
High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2nd band Black Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS108 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125.
55 to +125 Unit V mA °C °C Electrica.

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Published: Mar 23, 2005 |