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1SS120 - Silicon Diode

Key Features

  • Low capacitance. (C = 3.0pF max).
  • Short reverse recovery time. (trr = 3.5ns max).
  • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS120 Cathode band Light Blue Mark 1 Package Code MHD Outline 1 1 Cathode band 2 1. Cathode 2. Anode 1SS120 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power di.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
1SS108 Silicon Schottky Barrier Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS120 Cathode band Light Blue Mark 1 Package Code MHD Outline 1 1 Cathode band 2 1. Cathode 2. Anode 1SS120 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current.