2SA1810
2SA1810 is Silicon PNP Epitaxial Transistor manufactured by Hitachi Semiconductor.
Features
- Excellent high frequency characteristics f T = 300 MHz typ
- High voltage and low output capacitance VCEO =
- 200 V, Cob = 5.0 p F typ
- Suitable for wide band video amplifier
Outline
TO-126 MOD
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC
- Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
Ratings
- 200
- 200
- 5
- 0.2
- 0.5 1.25 10 150
- 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min
- 200
- 200
- 5
- 1
Typ
- -
- -
- -
- 300 5.0
Max
- -
- - 10 200
- 1.0
- 1.0
- -
Unit V V V µA
Test conditions I C...
