The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC2324(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. Base
1
2
3
1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Ratings 60 60 7 1 2 0.8 8 150 –55 to +150
Unit V V V A A W W °C °C
2SC2324(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60 7 — 2000 — — — — Typ — — — — — — 100 600 Max — — 10 — 1.5 2.0 — — V V ns ns VCC = 12 V I C = 250 mA, IB1 = –IB2 = 5 mA Unit V V µA Test conditions I C = 1 mA, RBE = ∞ I E = 0.