2SC2816
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC
- Tj Tstg
Ratings 500 400 7 5 10 2.5 40 150
- 55 to +150
Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ
- - Max
- - Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 m H I C = 5 A, IB1 =
- IB2 = 1.0 A VBE =
- 5.0 V, L = 180 µH, Clamped I E = 10 m A, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5.0 V, IC = 2.5 A- 1 VCE = 5.0 V, IC = 5 A- 1 V V µs µs µs I C = 2.5 A, IB = 0.5 A- 1 I C = 2.5 A, IB...
