2SC3338 - Silicon NPN Epitaxial Transistor

Hitachi Semiconductor (now Renesas)

Datasheet Details

Part number	2SC3338
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	24.33 KB
Description	Silicon NPN Epitaxial Transistor
Datasheet	2SC3338 Datasheet

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number	Description
2SC3336	Silicon NPN Transistor
2SC3337	Silicon NPN Transistor
2SC3365	Silicon NPN Transistor
2SC3374	NPN Transistor
2SC3380	Silicon NPN Triple Diffused Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC3338 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3338 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 3 50 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “AR”.