2SC4264 - Silicon NPN Transistor

Hitachi Semiconductor (now Renesas)

Datasheet Details

Part number	2SC4264
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	24.16 KB
Description	Silicon NPN Transistor
Datasheet	2SC4264 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC4264 Silicon NPN Epitaxial Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4264 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Note: Marking is “GC”.