Download 2SD1436K Datasheet PDF
Hitachi Semiconductor
2SD1436K
2SD1436(K) Silicon NPN Triple Diffused Application Power switching plementary pair with 2SB1032(K) Outline TO-3P 1 1. Base 2. Collector (Flange) 3. Emitter 1.5 kΩ (Typ) 130 Ω (Typ) 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) PC - Tj Tstg Rating 120 120 7 10 15 80 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 - - 1000 - - - - - - Typ - - - - - - - - - 0.8 4.0 Max - - 100 10 20000 1.5 3.0 2.0 3.5 - - V V V V µs µs Unit V V µA µA Test conditions I C = 25 m A, RBE = ∞ I E = 200 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 5 A- 1 I C = 5 A, IB = 10 m A- 1 I C = 10 A, IB = 0.1 A- 1 I C = 5 A, IB = 10 m A- 1 I C = 10 A, IB = 0.1 A- 1 I C = 5...