2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC
- Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
Rating 1000 1000 5 0.5 1.8 25 150
- 55 to +150
Unit V V V A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 1000 5
- 10 10
- -
- - Typ
- -
- -
- -
- 5 5 Max
- - 10
- - 1.2 5
- - V V MHz p F Unit V V µA Test conditions I C = 1 m A, RBE = ∞ I E = 1 m A, IC = 0 VCB = 800 V, IE = 0 VCE = 5 V, IC = 10 m A VCE = 5 V, IC = 100 m A VCE = 5 V, IC = 100 m A I C = 300 m A, IB = 60 m A VCE = 20 V, IC = 50 m A VCB = 100 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current...
