2SD1978
Silicon NPN Epitaxial, Darlington
Application
- Low frequency power amplifier
- plementary pair with 2SB1387
Outline
TO-92MOD
ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg ID Ratings 120 120 7 1.5 3.0 0.9 150
- 55 to +150 1.5 Unit V V V A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7
- - 2000
- -
- -
- Typ
- -
- -
- -
- -
- -
- Max
- -
- 1.0 10 30000 1.5 2.0 2.0 2.5 3.0 V V V V V Unit V V V µA µA Test conditions I C = 0.1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A- 1 I C = 1 A, IB = 1 m A- 1 I C =...
