2SD2104 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg Rating 120 120 7 8 12 2 25 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 - - 1000 - - - - Typ - - - - - - - - - - Max - - - 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V µA Test conditions I C = 0.1 m A, IE = 0 I C = 25 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 4 A- 1 I C = 4 A, IB = 8 m A- 1 I C = 8 A, IB = 80 m A- 1 I C = 4 A, IB = 8 m A- 1 I C = 8 A, IB = 80 m A- 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 20 10 Collector current IC (A) 5 2 1.0 0.5 0.2 0.1 0.05 0.02 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) Ta = 25°C 1 Shot Pulse IC(max) 20 i C(peak) Area of Safe Operation 1 µs PW =1 0m Op er DC 0µ s 1m s s ion (T C = ) °C 25 at Typical Output Characteristics 10 TC = 25°C...