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2SD2121S - Silicon NPN Epitaxial Planar Transistor

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2SD2121(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 35 35 5 2.5 3 18 150 –55 to +150 Unit V V V A A W °C °C 2SD2121(L)/(S) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 5 — 1 Typ — — — — — — — — Max — — — 20 320 — 1.5 1.