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2SD2300 - Silicon NPN Transistor

Key Features

  • High breakdown voltage VCBO = 1500 V.
  • Built-in damper diode type Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 2SD2300 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCES VEBO IC IC(peak) IC(surge) PC.
  • Tj.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • Built-in damper diode type Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 2SD2300 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C.