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2SJ506 - P-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS =.
  • 10V, ID =.
  • 5A).
  • Low drive current.
  • High speed switching.
  • 4V gate drive devices. Outline DPAK.
  • 2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperatur.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ506L P-Channel MOSFET
2SJ506S Silicon P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.