Datasheet Summary
2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
- Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS =
- 10V, ID =
- 5A)
- Low drive current
- High speed switching
- 4V gate drive devices.
Outline
DPAK- 2
4 D
1 2 G
1 2 S
1. Gate 2. Drain 3. Source 4. Drain
2SJ506(L),...
