2SJ506 Description
2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st.
2SJ506 Key Features
- Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = -10V, ID = -5A)
- Low drive current
- High speed switching
- 4V gate drive devices