Datasheet4U Logo Datasheet4U.com

2SJ506S Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st.

Key Features

  • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS =.
  • 10V, ID =.
  • 5A).
  • Low drive current.
  • High speed switching.
  • 4V gate drive devices. Outline DPAK.
  • 2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperatur.

2SJ506S Distributor