2SJ518
2SJ518 is Silicon P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 0.35 Ω typ. at (V GS =
- 10V, ID =
- 1A)
- Low drive current
- 4 V gete drive devices
- High speed switching
Outline
UPAK
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note2 Note1
Ratings
- 60 ±20
- 2
- 4
- 2
- 2 0.34
Unit V V A A A A m J W °C °C
EAR Pch Tch Tstg
Note3
1 150
- 55 to +150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at when using the aluminaceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
- 60 ±20
- -
- 1.0
- - 1.2
- -
- -
- -
- -
- Typ
- -
- -...
