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2SJ518 - Silicon P-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0.35 Ω typ. at (V GS =.
  • 10V, ID =.
  • 1A).
  • Low drive current.
  • 4 V gete drive devices.
  • High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ518 Silicon P Channel MOS FET High Speed Power Switching ADE-208-580B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.35 Ω typ. at (V GS = –10V, ID = –1A) • Low drive current • 4 V gete drive devices • High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note2 Note1 Ratings –60 ±20 –2 –4 –2 –2 0.34 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg Note3 1 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.