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2SJ76 - Silicon P-Channel MOS FET

Key Features

  • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch.
  • Channel temperature Storage temperatu.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ77 Silicon P-Channel MOS FET
2SJ78 Silicon P-Channel MOS FET
2SJ79 Silicon P-Channel MOS FET
2SJ113 SILICON P-CHANNEL MOS FET
2SJ114 HIGH FREQUENCY POWER AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch* Channel temperature Storage temperature Note: 1. Value at TC = 25°C Tch Tstg 1 Symbol VDSX Ratings –140 –160 –180 –200 ±15 –500 –500 1.