The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
Outline
TO-3P
D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.